Laboratory For Surface Modification

1975
1. Temperature Dependence of the Far-Infrared Absorption Spectrum in Amorphous Dielectrics, K. K. Mon, Y. J. Chabal, and A. J. Sievers, Phys. Rev. Lett. 35(20), 1352 (1975).

1978
2. Surface Electromagnetic Wave Launching at the Edge of a Metal Film, Y. J. Chabal and A. J. Sievers, Appl. Phys. Lett. 32, 90 (1978).
3. IR Study of Molecules Adsorbed on Metal Surfaces by Surface Electromagnetic Wave Spectroscopy, Y. J. Chabal and A. J. Sievers, J. Vac. Sci. Technol. 15(20), 638 (1978).

1980
4. High-Resolution Infrared Study of Hydrogen (1x1) on Tungsten (100), Y. J. Chabal and A. J. Sievers, Phys. Rev. Lett. 44(14), 944 (1980).
5. Evidence for a Disordered V19xV19 Structure for the Quenched Clean Si(111) Surface, Y. J. Chabal and J. E. Rowe, Proceedings of the International Conference on Ordering in Two Dimensions, Lake Geneva, Wisconsin, S. K. Sinha, ed., Elsevier North Holland (1980).

1981
6. Si(111): Ni Surface Studies by AES, UPS, LEED, and Ion Scattering, Y. J. Chabal, R. J. Culbertson, L. C. Feldman, and J. E. Rowe, J. Vac. Sci. Technol. 18, 880 (1981).
7. Buckling Reconstruction on Laser-Annealed Si(111) Surfaces, Y. J. Chabal, J. E. Rowe, and D. A. Zwemer, Phys. Rev. Lett. 46(9), 600 (1981).
8. Nature of Vicinal Laser-Annealed Si(111) Surfaces, Y. J. Chabal, J. E. Rowe, and S. B. Christman, Phys. Rev. B 24(6), 3303 (1981).
9. Infrared Study of Hydrogen Chemisorbed on W(100) by Surface- Electromagnetic-Wave Spectroscopy, Y. J. Chabal and A. J. Sievers, Phys. Rev. B 24(6), 2921 (1981).
10. High frequency modulation interferometric study of electron stimulated infrared (IR) luminescence, Y.J. Chabal, D.L. Allara, D. Teicher and J.E. Rowe. InSb in Proceedings of Spie - the International Society for Optical Engineering, 289, 82 (1981).

1982
11. Laser Quenched and Impurity Induced Metastable Si(111)1x1 Surfaces, Y. J. Chabal, J. E. Rowe, and S. B. Christman, J. Vac. Sci. Technol. 20, 763 (1982).
12. Photoemission and Band Structure Results for NiSi2, Y. J. Chabal, D. R. Hamann, J. E. Rowe, and M. Schluter, Phys. Rev. B 25(12), 7598 (1982).
13. Stoichiometry and Structural Disorder Effects on the Electronic Structure of Ni and Pd Silicides, Y. J. Chabal, J. E. Rowe, J. M. Poate, A. Franciosi, and J. H. Weaver, Phys. Rev. B 26(6), 2748 (1982).
14. Chemical Bonding at the Si-Metal Interface: Si-Ni and Si-Cr, A. Franciosi, J. H. Weaver, D. G. O'Neill, Y. J. Chabal, J. E. Rowe, J. M. Poate, O. Bisi, and C. Calandra, J. Vac. Sci. Technol. 21(2), 624 (1982).

1983
15. High Resolution Infrared Study of Hydrogen Chemisorbed on Si(100), Y. J. Chabal, E. E. Chaban, S. B. Christman, J. Electron Spectro. Rel. Phenom. 29, 35 (1983).
16. Surface State Optical Absorption on the Clean Si(100)2x1 Surface, Y. J. Chabal, S. B. Christman, E. E. Chaban, M. T. Yin, J. Vac. Sci. Technol. A 1, 1241 (1983).
17. Sample Manipulator for Operation Between 20K and 2000K in Ultrahigh Vacuum, E. E. Chaban, Y. J. Chabal, Rev. Sci. Instrum. 54, 1031 (1983).
18. Hydrogen Vibration on Si(111)7x7 - Evidence for a Unique Chemisorption Site, Y. J. Chabal, Phys. Rev. Lett. 50(23), 1850 (1983).
19. Hydrogen Chemisorption on Si(111)-(7x7) and –(1x1) Surfaces. A Comparative Infrared Study, Y. J. Chabal, G. S. Higashi, and S. B. Christman, Phys. Rev. B 28(8), 4472 (1983).

1984
20. IR Spectroscopy with Surface Electromagnetic Waves, A. J. Sievers, Z. Schlessinger and Y. J. Chabal, J. Phys. (Paris) C5, 167 (1984).
21. Hydride Formation on the Si(100):H2O Surface, Y. J. Chabal, Phys. Rev. B 29(6), 3677 (1984).
22. Evidence of Dissociation of Water on the Si(100)2x1 Surface", Y. J. Chabal and S. B. Christman, Phys. Rev. B 29(12), 6974 (1984).
23. Surface Infrared Study of Si(100)-(2x1)H, Y. J. Chabal and K. Raghavachari, Phys. Rev. Lett. 53(3), 282 (1984).
24. Infrared Absorption in a-Si:H: First Observation of Gaseous Molecular H2 and Si-H Overtone, Y. J. Chabal and C. K. N. Patel, Phys. Rev. Lett. 53(2), 210 (1984).
25. Infrared Absorption in a-Si:H: First Observation of the Gas-Solid Transition of Occluded Molecular H2, Y. J. Chabal and C. K. N. Patel, Physica B&C, 126(1-3), 461 (1984).
26. Solid Hydrogen in Amorphous Silicon: Phase Transition, Y. J. Chabal and C. K. N. Patel, Phys. Rev. Lett. 53(18), 1771 (1984).

1985
27. Evidence for High Pressure Gaseous Molecular Hydrogen in a-Si:H . An Infrared Study, Y. J. Chabal and C. K. N. Patel, Proceedings of the 17th International Conference on the Physics of Semiconductors, J. D. Chadi and W. A. Harrison, eds, Springer-Verlag, p.909 (1985).
28. High-Resolution Infrared Spectroscopy and Surface Structure, Y. J. Chabal, in The Structure of Surfaces, M. A. Van Hove and S. Y. Tong eds., Springer-Verlag (Springer Series in Surface Sciences), 2, 70 (1985).
29. Infrared Linewidths and Vibrational Lifetimes at Surfaces: H on Si(100), J. C. Tully, Y. J. Chabal, K. Raghavachari, J. M. Bowman and R. R. Lucchese, Phys. Rev. B 31(2), 1184 (1985).
30. New Ordered Structure for the H-saturated Si(100) Surface: the (3x1) Phase Y. J. Chabal, K. Raghavachari, Phys. Rev. Lett. 54(10), 1055 (1985).
31. Infrared Study of the Chemisorption of Hydrogen and Water on Vicinal Si(100)-2x1 Surface," Y. J. Chabal, J. Vac. Sci. Technol. A 3, 1448 (1985).
32. Studies on Self-sustained Reaction-rate Oscillations: I. Real-time Surface Infrared Measurements During Oscillatory Oxidation of Carbon Monoxide, V. A. Burrows S. Sundaresan, Y. J. Chabal and S. B. Christman, Surf. Sci. 160(1), 122 (1985).
33. Linewidth of H Chemisorbed on W(100): An Infrared Study, D. M. Riffe, L. M. Hanssen, A. J. Sievers, Y. J. Chabal and S. B. Christman, Surf. Sci. 161(1), L559 (1985).
34. Electronic Damping of Hydrogen Vibration on the W(100) Surface, Y. J. Chabal, Phys. Rev. Lett. 55(8), 845 (1985).
35. Effects of High Pressure Molecular Hydrogen in a-Si:H, Y. J. Chabal and C. K. N. Patel, J. Non-Cryst. Solids 77-78(1), 201 (1985).

1986
36. High Resolution Infrared Spectroscopy of Adsorbates on Semiconductor Surfaces: Hydrogen on Si(100) and Ge(100), Y. J. Chabal, Surf. Sci. 168(1-3), 594 (1986).
37. Dynamics of H Chemisorbed on Si(100) and W(100) Studied by High-Resolution Infrared Spectroscopy, Y. J. Chabal, J. Electron Spectro. rel. Phenom. 38, 159 (1986).
38. Infrared Absorption Measurement of the Overtone of the Wagging Mode of Hydrogen on W(100), Y. J. Chabal, J. Vac. Sci. Technol. A 4, 1324 (1986).
39. H-induced structural phase transitions on W(100) by surface infrared spectroscopy, J. J. Arrecis, Y. J. Chabal and S. B. Christman, Phys. Rev. B 33, 7906 (1986).

1987
40. Real Time Study of Self-sustained Oscillations in the CO Oxidation Rate on Pt, V. A. Burrows and S. Sundaresan and Y. J. Chabal, J. Vac. Sci. Technol. A 5, 801 (1987).
41. Reconstruction, adsorbate bonding, and desorption kinetics of H/Mo(100), J. A. Prybyla and P. J. Estrup and Y. J. Chabal, J. Vac. Sci. Technol. A 5(4), 791 (1987).
42. Studies on Self-sustained Reaction-rate Oscillations: II The Rate of Carbon and Oxides in the Oscillatory Oxidation of Carbon Monoxide on Platinum, V. A. Burrows, S. Sundaresan, Y. J. Chabal and S. B. Christman, Surf. Sci. 180(1), 110 (1987).
43. Reconstruction, adsorbate bonding, and desorption kinetics of H/Mo (100) J.A. Prybyla, P.J. Estrup and Y.J. Chabal. in 10th International Vacuum Congress (IVC-10), 6th International Conference on Solid Surfaces (ICSS-6) and 33rd National Symposium of the American Vacuum Society, J. Vac. Sci. Technol. A, 5(4), 791 (1987).
44. Studies on Self-sustained Reaction-rate Oscillations: III The Carbon Model, N. A. Collins and S. Sundaresan and Y. J. Chabal, Surf. Sci. 180(1), 136 (1987).
45. Molecular Hydrogen in a-Si:H, Y. J. Chabal and C. K. N. Patel, Rev. Mod. Phys. 59(4), 835 (1987).
46. Self-sustained Kinetic Oscillations in the Catalytic CO Oxidation on Platinum, Y. J. Chabal, S. B. Christman, V. A. Burrows, N. A. Collins, S. Sundaresan, in "Kinetics of Interface Reactions," M. Grunze and H. J. Kreuzer eds, Springer-Verlag (Springer Series in Surf. Sci.), 8, 285 (1987)
47. Reconstructive Phase Transitions and Effective Adsorbate-Adsorbate Interactions: H/Mo(100) and H/W(100), J. A. Prybyla, P. J. Estrup, S. C. Ying, Y. J. Chabal and S. B. Christman, Phys. Rev. Lett. 58(18), 1877 (1987).
48. Vibrational Properties at Semiconductor Surfaces and Interfaces, Y. J. Chabal, in Semiconductor Interfaces: Formation and Properties, G. LeLay and J. Derrien eds, Springer-Verlag ( Springer Proceed. in Phys.) 22, 301(1987).
49. Properties of Adsorbed Atoms and Molecules by Surface Infrared Spectroscopy, Y. J. Chabal, Proc. 10th International Conference on Chemical Vapor Deposition, 87-88, 1 (1987).
50. Deposition of iron on Si(111)-(7x7): photo- and electron-assisted decomposition of Fe(CO)5 in Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces. J.R. Swanson, C.M. Friend and Y.J. Chabal. Symp. MRS, p.559 (1987)
51. Laser-assisted Deposition of Iron on Si(111)-(7x7): The Mechanism and Energetics of Fe(CO)5 Decomposition J. R. Swanson, C. M. Friend and Y. J. Chabal, J. Chem. Phys. 87(8), 5028 (1987).
52. Hydrogen-Induced Reconstruction of W(100) and Mo(100) by Surface Infrared Spectroscopy, Y. J. Chabal, S. B. Christman, J. J. Arrecis, J. A. Prybyla and P. J. Estrup, J. Electron Spectr. Rel. Phenom. 44(1), 17 (1987).
53. Hydrogen Phonon Spectra on Transition Metal Surfaces: Infrared Reflection - Absorption Investigations of Mo(100), W(100), and Pt(111), J. E. Reutt, Y. J. Chabal, and S. B. Christman, J. Electron Spectr. Rel. Phenom. 44(1), 325 (1987).

1988
54. Infrared Spectroscopy of Semiconductor Surfaces," Y. J. Chabal, in Chemistry and Physics of Solid Surfaces VII, R. Vanselow and R.F. Howe eds, 10, 108 (1988).
55. Hydrogen Phonon Spectra on Pt(111) at T=100K 160K, J. E. Reutt, Y. J. Chabal, and S. B. Christman, J. Vac. Sci. Technol. A 6, 816 (1988).
56. Optical spectroscopy at Surfaces, Y. J. Chabal, Science 239, G195 (1988).
57. Laser-Assisted Deposition of Fe and W: Photodecomposition of Fe(CO)5 and W(CO)6 on Si(111) 7x7, J. R. Swanson, C. M. Friend, and Y. J. Chabal, Laser and particle beam chemical processing for microelectronics, MRS symp. 101, 201 (1988).
58. Chemistry, Structure, Dynamics and Kinetics of Adsorbates on Surfaces by FTIR, Y. J. Chabal, Proc. Third International. Conference on Laser Science, 172, 471 (1988).
59. Surface Infrared Spectroscopy, Y. J. Chabal, Surf. Sci. Reports 8(5-7), 211 (1988).
60. Coupling of H Vibration to Substrate Electronic States in Mo(100)-p(1x1)H and W(100)-p(1x1)H –Example of strong Breakdown of Adiabaticity, J. E. Reutt, Y. J. Chabal, and S. B. Christman, Phys. Rev. B 38(5), 3112 (1988).
61. Infrared Spectroscopy of Si(111) Surfaces after HF Treatment: Hydrogen Termination and Surface Morphology, V. A. Burrows, Y. J. Chabal, G. S. Higashi, K. Raghavachari, and S. B. Christman, Appl. Phys. Lett. 53(11), 998 (1988).
62. Review of Semiconductor Interfaces: Formation and Properties, Y. J. Chabal, Opt. Engr. 27, SR-153 (1988).
63. Characteristics and performance of the National Synchrotron Light Source infra-red beamline G.P. Williams, C.J. Hirschmugl, D.P. Siddons, E.A. Sullivan, K.D. Moeller, P. Petrone, E. Angelides, Y.J. Chabal and F.M. Hoffmann. in Proc. of Spie - the International Society for Optical Engineering, 1039, 263-264 (1988).
64. Microscopic CO Diffusion on a Pt(111) Surface by Time-Resolved Infrared Spectroscopy, J. E. Reutt-Robey, D. J. Doren, Y. J. Chabal and S. B. Christman, Phys. Rev. Lett. 61(24), 2778 (1988).

1989
65. Coherence Effects in Long Wavelength Infrared Synchrotron Radiation Emission, G. P. Williams, C. J. Hirschmugl, E. M. Kneedler, P. Z. Takacs, M. Shleifer, Y. J. Chabal and F. M. Hoffman, Phys. Rev. Lett. 62(3), 261 (1989).
66. CO Diffusion on Pt(111) by Time-Resolved Surface Infrared Spectroscopy, J. E. Reutt-Robey, Y. J. Chabal, D. J. Doren and S. B. Christman, J. Vac. Sci. Technol. A 7(3), 2227 (1989).
67. Infrared Spectroscopy of Si(111) and Si(100) Surfaces after HF Treatment: Hydrogen Termination and Surface Morphology, Y. J. Chabal, G. S. Higashi and K. Raghavachari, J. Vac. Sci. Technol. A 7(3), 2104 (1989).
68. Infrared Spectroscopy of Si(111) and Si(100) Surfaces after HF Treatment: Hydrogen Termination and Surface Morphology, Y. J. Chabal, G. S. Higashi and K. Raghavachari, Proc. Materials Research Society: Chemical Perspectives of Microelectronic Materials, 131, 191 (1989).
69. Structure and Kinetics of Molecules at Surfaces, Y. J. Chabal, 7th International Conference on Fourier Transform Spectroscopy, D. G. Cameron ed, Proc. SPIE, 1145, 34 (1989).
70. Infrared Synchrotron Radiation Measurements at Brookhaven using a Nicolet 20F Spectrometer, G. P. Williams, C. J. Hirschmugl, E. A. Sullivan, E. M. Kneedler, Y. J. Chabal, F. M. Hoffmann, and K. D. Moeller, FT-IR Spectral Lines 10, 5 (1989).

1990
71. Ideal Hydrogen Termination of the Si(111) Surface, G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56(7), 656 (1990).
72. Molecular Diffusion on Metal Surfaces: Time-Resolved Infrared Spectroscopy and other Techniques, Y. J. Chabal, Vacuum 41(1-3), 70 (1990).
73. Monitoring Low Coverage Surface Chemistry and Bulk Transport: NO2 Dissociation and Oxygen Penetration at a GaAs(110) Surface, A. vom Felde, C.Bahr, K. Kern, G. S. Higashi, Y. J. Chabal, and M. J. Cardillo, Phys. Rev. B 42(10), 6865 (1990).
74. Low Temperature Adsorption and Reaction of NO on GaAs(110), K. Kern, Y. J. Chabal, G. S. Higashi, A. vom Felde and M. J. Cardillo, Chem. Phys. Lett. 168(2), 203 (1990).
75. Oxidation of GaAs(110) with NO2 : Infrared Spectroscopy, A. vom Felde, K. Kern, G. S. Higashi, Y. J. Chabal, S. B. Christman, C. C. Bahr, and M. J. Cardillo, Phys. Rev. B 42(8), 5240 (1990).
76. Lifetime of an Adsorbate-Substrate Vibration: H on Si(111), P. Guyot-Sionnest, P. Dumas, Y. J. Chabal, and G. S. Higashi, Phys. Rev. Lett. 64(18), 2156 (1990).
77. Adsorbate-Substrate Resonant Interactions Observed for CO on Cu(100) in the Far-IR, C. J. Hirschmulg, G. P. Williams, F. M. Hoffmann, and Y. J. Chabal, Phys. Rev. Lett. 65(4), 480 (1990).
78. Mechanism of HF Etching of Silicon Surfaces: A theoretical Understanding of Hydrogen Passivation, G. W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. Chabal, Phys. Rev. Lett. 65(4), 504 (1990).
79. Coupling of an Adsorbate Vibration to a Substrate Surface Phonon: H on Si(111), P. Dumas, Y. J. Chabal, and G. S. Higashi, Phys. Rev. Lett. 65(9), 1124 (1990).
80. Atomic Scale Conversion of Clean Si(111):H-1x1 to Si(111)-2x1 by Electron-Stimulated Desorption, R.S. Becker, G.S. Higashi, Y.J. Chabal and A.J. Becker, Phys. Rev. Lett. 65(15), 1917 (1990).
81. Lifetime of an Adsorbate-Substrate Vibration: H on Si(111), P. Guyot-Sionnest, P. Dumas, Y.J. Chabal and G.S. Higashi, Proceedings of the 7th Ultrafast Phenomena Conference, Springer-Verlag, (1990).
82. Lifetime of an Adsorbate-Substrate Vibration Measured by Sum Frequency Generation: H on Si(111), P. Guyot-Sionnest, P. Dumas and Y.J. Chabal, J. Electron Spectr. Rel. Phenom. 54-55, 27 (1990).
83. Lineshape of the Si-H Stretching Vibration for the Ideally H-terminated Si(111)1x1, P. Dumas, Y.J. Chabal and G.S. Higashi, J. Electron Spectr. Rel. Phenom. 54-55, 103 (1990).
84. Adsorbate-Substrate Resonant Interactions observed for CO on Cu(100) and Cu (111) in the Far-Infrared using Synchrotron Radiation, C.J. Hirschmugl, G.P. Williams, F.M. Hoffmann and Y.J. Chabal, J. Electron Spectr. Rel. Phenom. 54-55, 109 (1990).
85. Inelastic Helium Scattering Measurements of Surface Phonons in H-terminated Si(111)-(1x1), R.B. Doak, Y.J. Chabal, G.S. Higashi and P. Dumas, J. Electron Spectr. Rel. Phenom. 54-55, 291 (1990).
86. Adsorption States and Orientation of N-alkyl Anhydride Molecules on oxidized Aluminum surfaces, K. Berrada, P. Dumas, Y.J. Chabal and P. Dubot, J. Electron Spectr. Rel. Phenom. 54-55, 1153 (1990).
87. CO Diffusion on Pt(111) with Time-Resolved Infrared Pulsed Molecular Beam Methods: Critical Tests and Analysis, J.E. Reutt-Robey, D.J. Doren, Y.J. Chabal and S. B. Christman, J. Chem. Phys. 93(12), 9113 (1990).

1991
88. Phase Diagram, Surface Structures and Adsorbate Bonding in the H/Mo(100) Chemisorption System, J.A. Prybyla, P.J. Estrup and Y.J. Chabal, J. Chem. Phys. 94(9), 6274 (1991).
89. High Resolution Surface Infrared Spectroscopy: H Vibration on a Si(111) Surface, P. Dumas and Y.J. Chabal, FT-IR Spectral Lines 12, 6 (1991).
90. Vibrational Dynamics of the Ideally H-Terminated Si(111) Surface, Y. J. Chabal, P. Dumas, G. Guyot-Sionnest, and G. S. Higashi, Surf. Sci. 242(1-3), 524 (1991).
91. Infrared Spectroscopy of Hydrogen on Silicon Surfaces, Y.J. Chabal, Physica B 170(1-4), 447 (1991).
92. Comparison of Si(100) Surfaces Prepared using Aqueous Solutions of NH4F versus HF, G.S. Higashi, R.S. Becker, Y.J. Chabal and A.J. Becker, Appl. Phys. Lett. 58(15), 1656 (1991).
93. Chemical Etching of Vicinal Si(111): Dependence of the Surface Structure and the Hydrogen Termination on the pH of the Etching Solutions, P. Jakob and Y. J. Chabal, J. Chem. Phys. 95(4), 2897 (1991).
94. Electron Energy Loss Characterization of the H-Terminated Si(111) and Si(100) Surfaces Obtained by Etching in NH4F, P. Dumas and Y. J. Chabal, Chem. Phys. Lett. 181(6), 537 (1991).
95. Influence of the Silicon Oxide on the Morphology of HF-Etched Si(111) Surfaces: Thermal Versus Chemical Oxide, P. Jakob, P. Dumas, and Y. J. Chabal, Appl. Phys. Lett. 59(23), 2968 (1991).
96. Line Shape Analysis of the Si-H Stretching Mode of the Ideally H-Terminated Si(111) Surface: The Role of Dynamical Dipole Coupling, P. Jakob, Y.J. Chabal and K. Raghavachari, Chem. Phys. Lett. 187(3), 325 (1991).
97. Amortissement des vibrations d'atomes adsorbés sur une surface, P. Guyot-Sionnest, P. Dumas and Y. J. Chabal, Le Courrier du CNRS (1991 Images de la physique), 77 (Supplément), 50 (1991).
98. Comment on 'Mechanism of HF etching of silicon surfaces: a theoretical understanding of hydrogen passivation' (and reply), E. Sacher, A. Yelon, G.W. Trucks, K. Raghavachari, G.S. Higashi and Y.J. Chabal, Phys. Rev. Lett. 66(12), 1647 (1991)

1992
99. Inverse Photoemission Study of the Unreconstructed, Ideally H-Terminated Si(111) Surface, S. Bouzidi, F. Coletti, J. M. Debever, P. A. Thiry, P. Dumas, and Y. J. Chabal, Phys. Rev. B 45(3), 1187 (1992).
100. Conduction-Bands Asymmetry of Si(111) Revealed by Inverse Photoemission, S. Bouzidi, F. Coletti, J. M. Debever, P. A. Thiry, P. Dumas, and Y. J. Chabal, Surf. Sci. 269/270, 829 (1992).
101. Morphology of Hydrogen-Terminated Si(111) and Si(100) Surfaces Upon Etching in HF and Buffered-HF Solutions, P. Dumas, Y. J. Chabal, and P. Jakob, Surf. Sci. 269(3), 867 (1992).
102. Kinetic Model of the Chemical Etching of Si(111) Surfaces by Buffered HF-Solutions, P. Jakob, Y. J. Chabal, K. Raghavachari, R. S. Becker, and A. J. Becker, Surf. Sci. 275, 407 (1992).
103. Electron Energy Loss Spectroscopy of H-Terminated Si(111) and Si(100) Prepared by Chemical Etching, P. Dumas and Y. J. Chabal, J. Vac. Sci. Technol. A 10(4), 2160 (1992).
104. Vibrational Energy Transfer on Hydrogen-terminated Vicinal Si(111) Surfaces: Interadsorbate Energy Flow, M. Morin, P. Jakob, N. J. Levinos, Y. J. Chabal and A. L. Harris, J. Chem. Phys. 96(8), 6203 (1992).
105. Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall Morphology, Y. J. Chabal, MRS. Symp. Proc. 259, 349 (1992).

1993
106. Step Relaxation and Surfaces Stress at H-Terminated Vicinal Si(111), K. Raghavachari, P. Jakob, and Y.J. Chabal, Chem. Phys. Lett. 206(1-4), 156 (1993).
107. Vibrational Properties of H-Si(111)-(1x1) Surfaces: Infrared Absorption and Electron Energy Loss Spectroscopic Studies, P. Dumas, Y. J. Chabal, and P. Jakob, Appl. Surf. Sci. 66(1-4), 580 (1993).
108. Silicon surface chemical composition and morphology, G. S. Higashi and Y. J. Chabal, Chapter in Handbook of Silicon Wafer Cleaning Technology: Science, Technology, and Applications, Werner Kern ed, Noyes Pub., p.433 (1993).
109. Infrared Spectroscopy of H-Terminated Silicon Surfaces, Y. J. Chabal, A. L. Harris, K. Raghavachari, and J. C. Tully, International Journal of Modern Physics B 7(4), 1031 (1993).
110. Studies of Semiconductor Surfaces: Vibrational Spectroscopy of Adsorbates, Y. J. Chabal, in Internal Reflection Spectroscopy: Theory and Applications, F. M. Mirabella, Ed., Marcel Dekker, p.791 (1993).
111. Infrared Spectroscopy of Semiconductor Surfaces: H-terminated Silicon Surfaces, Y. J. Chabal, J. Molecular Structure 292, 65 (1993).
112. Surface Chemical Reactions Studied with Scanning Tunneling Microscopy, R.S. Becker, A.J. Becker, G.S. Higashi and Y.J. Chabal, Scanning Microscopy Suppl. 7, 269 (1993).
113. Imperfections on the Chemically Prepared, Ideally H-terminated Si(111)-(1x1), P. Jakob, Y. J. Chabal, K. Raghavachari, P. Dumas and S.B. Christman, Surf. Sci. 285(3), 251 (1993).
114. Electronic Structure and its Dependence on Local Order for H/Si(111)-(1x1) Surfaces, K. Hricovini, R. Gunther, P. Thiry, A. Taleb-Ibrahimi, G. Indlekofer, J.E. Bonnet, P. Dumas, Y. Petroff, X. Blase, X. Zhu, S.G. Louie, Y.J. Chabal and P.A. Thiry, Phys. Rev. Lett. 70(13), 1992 (1993).
115. Discrete Nature of Inhomogeneity on Stepped H/Si(111) Surfaces: Spectroscopic Identification of Individual Terrace Sizes, P. Jakob, Y.J. Chabal, K. Raghavachari and S.B. Christman, Phys. Rev. B 47(11), 6839 (1993).
116. Real Time in situ Monitoring of Surface Reactions During Plasma Passivation of GaAs, E.S. Aydil, K. Giapis, Zhen-Hong, Zhou, J.A. Gregus, R.A. Gottscho and Y.J. Chabal, Appl. Phys. Lett. 62(24), 3156 (1993).
117. Real Time in situ Monitoring of Room temperature Silicon Surface Cleaning using Hydrogen and Ammonia Plasmas, Z. Zhen-Hong, E.S. Aydil, R.A. Gottscho, Y.J. Chabal and R. Reif, J. Electrochem. Soc. 140(11), 3316 (1993).
118. Vibrational Energy Transfer between Adsorbate Modes: Picosecond Dynamics on Stepped H/Si(111) Surfaces, K. Kuhnke, M. Morin, P. Jakob, N.J. Levinos, Y.J. Chabal and A.L. Harris, J. Chem. Phys. 99(8), 6114 (1993).
119. Real Time In Situ Monitoring of Surface Reactions During Plasma Passivation of GaAs, E. S. Aydil, Z. Zhen Hong, R. A. Gottscho, and Y. J. Chabal, ECS Proc. (1993).
120. Enhanced Cohesion of Photo-Oxygenated Fullerene Films: A New Opportunity for Lithography, A. F. Hebard, C. B. Eom, R. M. Fleming, Y. J. Chabal, A. J. Muller, S. H. Glarum, G. J. Pietsch, R. C. Haddon, A. M. Mujsce, M. A. Paczkowski and G. P. Kochanski, Appl. Phys. A 57(3), 299 (1993).
121. First-Principles Study of the Etching Reactions of HF and H2O, K. Raghavachari, G. S. Higashi, Y. J. Chabal, and G. W. Trucks, MRS Symp. Proc. 315, 437 (1993).
122. The Influence of HF, OH and Dissolved O2 in Silicon Surface Chemical Cleaning, G. S. Higashi, Y. J. Chabal, K. Raghavachari, R. S. Becker, M. P. Green, K. Hanson, T. Boone, J. H. Eisenberg, S. F. Shive, G. N. DiBelo and K. L. Fulford, Proc. Fourth International Symposium on ULSI scientific technology (1993).
123. Interadsorbate Vibrational Energy Flow on Stepped Vicinal H/Si(111) Surfaces, M. Morin, K. Kuhnke, P. Jakob, Y. J. Chabal, N. J. Levinos, and A. L. Harris, J. Electron Spectro. Rel. Phenom. 64/65, 11 (1993).
124. The Role of Kinks in the Si-H Vibrational Spectrum of Vicinal Si(111)-112 Surfaces, P. Jakob, Y. J. Chabal, and K. Raghavachari, J. Electron Spectro. Rel. Phenom. 64/65, 59 (1993).
125. Dipole Forbidden Vibrational Modes for NO and CO on Cu observed in the Far Infrared, C.J. Hirschmugl, P. Dumas, Y.J. Chabal, F.M. Hoffmann, M. Suhren and G.P. Williams, J. Electron Spectro. Rel. Phenom. 64/65, 67 (1993).
126. Looking Up the Down Staircase: Surface Raman Spectroscopy as Probe of Adsorbate Orientation," M. A. Hines, T. D. Harris, A. L. Harris, and Y. J. Chabal, J. Electron Spectro. Rel. Phenom. 64/65, 183 (1993).
127. Vibrational Energy Flow at Stepped H/Si(111): Phonons, Dipoles, Screening and All That, A. L. Harris, K. Kuhnke, M. Morin, P. Jakob, N. J. Levinos and Y. J. Chabal, Faraday Discuss. 96, 217 (1993).
128. Raman Studies of Steric Hindrance and Surface Relaxation on Stepped H-terminated Silicon Surfaces, M. A. Hines, Y. J. Chabal, T. D. Harris, and A. L. Harris, Phys. Rev. Lett. 71(14), 2280 (1993).

1994
129. Monohydride Structures on Chemically Prepared Silicon Surfaces, P. Jakob, Y. J. Chabal, K. Kuhnke and S. B. Christman, Surf. Sci. 302(1-2), 49 (1994).
130. Chemo-Mechanical Polishing of Silicon: Surface Termination and Mechanism of Removal, G.J. Pietsch, G.S. Higashi and Y.J. Chabal, Appl. Phys. Lett. 64(23), 3115 (1994).
131. Infrared Spectroscopy of Semiconductor Surface Vibrations, Y.J. Chabal in Handbook of Semiconductors, Volume 2: Optical Properties, M. Balkanski ed, Elsevier Science, 2, 187 (1994).
132. Low Temperature Formation of Si(111)7x7 Surfaces from Chemically Prepared H/Si(111)-(1x1) Surfaces, Le Thanh Vinh, M. Eddrief, A. Sebenne, P. Dumas, A. Taleb-Ibrahimi, R. Gunther, Y. J. Chabal, and A. Derrien, Appl. Phys. Lett. 64(24), 3308 (1994).
133. Low Frequency Dynamics of CO/Cu - Breakdown of Born-Oppenheimer Approximation, C. Hirschmugl, G.P. Williams, Y.J. Chabal and F.M. Hoffmann, J. Vac. Sci. Technol. A 12(4), 2229 (1994).
134. Transient Vibrational Mode Renormalization in Dipole-Coupled Adsorbates at Surfaces, K. Kuhnke, A. L. Harris, Y.J. Chabal, P. Jakob and M. Morin, J. Chem. Phys. 100(9), 6896 (1994).
135. Measuring the Structure of Etched Silicon Surfaces with Raman Spectroscopy, M. A. Hines, Y. J. Chabal, T. D. Harris, and A. L. Harris, J. Chem. Phys. 101(9), 8055 (1994).
136. Silicon Wafer Bonding Studied by Infrared Absorption Spectroscopy, D. Feijoo, Y. J. Chabal, and S. B. Christman, Appl. Phys. Lett. 65(20), 2548 (1994).
137. Surface Vibrational Spectroscopies for Silicon Processing, Y. J. Chabal, Proc.International Conference on Advanced Microelectronic Devices and Processing, p.69 (1994).
138. High-Resolution Photoemission Spectroscopy of Flat and Stepped Non Reconstructed H/Si(111) Surfaces, A. Taleb-Ibrahimi, R. Gunther, P. Dumas, G. Indlekofer, Y.J. Chabal and Y. Petroff, J. Phys. IV 4(C9), 89 (1994).
139. Dimensions of Luminescent Oxidized and Porous Silicon Structures, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y. Xie, T. D. Harris, W. L. Brown, Y. J. Chabal, L. E. Brus, P. H. Citrin, and F. M. Ross, Phys. Rev. Lett. 72(16), 2648 (1994).
140. Spectroscopic Characterization of Model Surfaces: Chemically Prepared, Ideally Hydrogen-Terminated Si(111), Y. J. Chabal and P. Dumas, Physicalia Mag. 16, 183 (1994).
141. Real Time Monitoring of Surface Chemistry During Plasma Processing, E.S. Aydil, R.A. Gottscho and Y.J. Chabal, Pure and Appl. Chem. 66(6), 1381 (1994).
142. Real-Time In Situ Monitoring of Surfaces During Glow Discharge Processing: NH3 and H2 Plasma Passivation of GaAs, R. A. Gottscho, E. S. Aydil, Z. H. Zhou, and Y. J. Chabal, J. Vac. Sci. Technol. B 13(2), 258 (1994).

1995
143. Size, Shape, and Crystallinity of Luminescient Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y.-H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, P. J. Szajowski, E. E. Chaban, L. E. Brus, and P. H. Citrin, MRS. Proc. 358, 407 (1995).
144. X-Ray Absorption Spectroscopy from H-Passivated Porous Si and Oxidized Si Nanocrystals, S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y.-H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, P. J. Szajowski, E. E. Chaban, L. E. Brus, and P. H. Citrin, MRS Proc. 358, 113 (1995).
145. Vibrational Characterization and Electronic Properties of the Long Range Ordered, Ideally Hydrogen-Terminated Si(111), P. Dumas, Y. J. Chabal, R. Gunther, A. Taleb-Ibrahimi, and A. Petroff, Progress in Surf. Sci. 48(1-4), 313 (1995).
146. Characterization of Silicon Surfaces and Interfaces by Optical Vibrational Spectroscopy, Y. J. Chabal, M. A. Hines, and D. Feijoo, J. Vac. Sci. Technol. A 13(3), 1719 (1995).
147. Infrared Absorption Spectroscopy of Si(100) and Si(111) Surfaces after Chemo-mechanical Polishing, G. J. Pietsch, Y. J. Chabal and G. S. Higashi, J. Appl. Phys. 78(3), 1650 (1995).
148. Real-Time in-Situ Monitoring of Surfaces During Glow-Discharge Processing - Nh3 and H-2 Plasma Passivation of Gaas, E.S. Aydil, Z.H. Zhou, R.A. Gottscho and Y.J. Chabal, J. Vac. Sci. Technol. B 13(2), 258 (1995).
149. The atomic-scale Removal Mechanism during Chemo-mechanical Polishing of Si(100) and Si(111), G.J. Pietsch, Y.J. Chabal, and G.S. Higashi, Surf. Sci. 333, 395 (1995).
150. Size, Shape and Composition of Luminescent Species in Oxidized Si Nanocrystals and H-passivated Porous Si, M.A. Marcus, S. Schuppler, S.L. Friedman, D.L. Adler, Y.-H. Xie, F.M. Ross, Y.J. Chabal, T.D. Harris, L. E. Brus, W.L. Brown, E.E. Chaban, P.J. Szajowski, S.B. Christman, and P. H. Citrin, Phys. Rev. B 52(7), 4910 (1995).
151. Silicon Surface Chemistry by IR Spectroscopy in the Mid- to Far-IR Region: H2O and Ethanol on Si(100), L.M. Struck, J. Eng, Jr., B.E. Bent, Y.J. Chabal, G.P. Williams, A.E. White, S.B. Christman, E.E. Chaban, K. Raghavachari, G.W. Flynn, K. Radermacher, and S. Mantl, MRS Symp. Proc. 386, 395 (1995).
152. The Role of Hydrogen in Silicon Wafer Bonding: An infrared Study, M. K. Weldon, Y. J. Chabal, S.B. Christman, J. Bourcereau, C.A. Goodwin, C-M. Hsieh, S. Nakahara, R.H. Shanaman, W.G. Easter, and L.C. Feldman, Proc. 1995 IEEE International SOI Conference, p. 168 (1995).
153. Probing the interface of bonded silicon wafers with infrared Absorption Spectroscopy, Y.J. Chabal, D. Feijoo, S.B. Christman, and C.A. Goodwin, Electroch. Soc. Proc. 95-97, 305 (1995).

1996
154. Vibrational Interactions at Surfaces: H2O on Si(100), K. Raghavachari, L.M. Struck and Y.J. Chabal, Chem. Phys. Lett. 252(3-4), 230 (1996).
155. Infrared Spectroscopy of Oxide Formation at Silicon Interfaces, M. K. Weldon, Y. J. Chabal, S. B. Christman, E.E. Chaban, L. C. Feldman, C. A. Goodwin and C. M Hsieh, Electrochemical Society Proceedings, 96, 121 (1996).
156. Physics and Chemistry of Silicon Wafer Bonding Investigated by Infrared Absorption Spectroscopy, M. K. Weldon, Y. J. Chabal, S. B. Christman, E. E. Chaban, L. C. Feldman, and D. R. Hamann, J. Vac. Sci. Technol. B. 14(4), 3095 (1996)
157. Mechanistic Studies of Hydrophilic Wafer Bonding and Si Exfoliation of SOI Fabrication, M. K. Weldon, Y. J. Chabal, S. B. Christman, E. E. Chaban, D. C. Jacobson, A. J. Sapjeta, A. Pinczuk, B. S. Dennis, A. Mills, C. A. Goodwin, and C.-M. Hsieh, Proc. of the 1996 IEEE International SOI Conference, p. 150 (1996).
158. Infrared Spectroscopy as a Probe of Fundamental Processes in Microelectronics: Silicon Wafer Cleaning and Bonding, M. K. Weldon, V. E. Marsico, Y. J. Chabal, D. R. Hamann, S. B. Christman, and E. E. Chaban, Surf. Sci. 368, 163 (1996).
159. Vibrational Study of C60 Overlayers on H/Si(111)-(1x1), P. Dumas, M. Gruyters, P. Rudolf, Y. He, L.-M. Yu, G. Gensterblum, R. Caudano, and Y. J. Chabal, Surf. Sci. 368, 330 (1996).

1997
160. Adsorption and Reactivity of NO on Cu(111): a Synchrotron Infrared Reflection Absorption Spectroscopic Study, P. Dumas, M. Suhren, Y. J. Chabal, C. J. Hirschmugl, and G. P. Williams, Surf. Sci. 371(2-3), 200 (1997).
161. Vibrational Study of silicon Oxidation: H2O on Si(100), L.M. Struck, J. Eng, Jr., B.E. Bent, Y.J. Chabal, S.B. Christman, E.E.Chaban, K. Raghavachari, A.E. White, G.P. Williams, K. Radermacher, and S. Mantl, Surf. Sci. 380(2-3), 444 (1997).
162. A Vibrational Study of Ethanol Adsorption on Si(100), J. Eng, K. Raghavachari, L.M. Struck, Y.J. Chabal, B.E. Bent, G.W. Flynn, S.B. Christman, E.E. Chaban, G.P. Williams, K. Radermacher, and S. Mantl, J. Chem. Phys. 106(23), 9889 (1997).
163. Applications of Infrared Absorption Spectroscopy to the Microelectronic Industry, Y. J. Chabal, M. K. Weldon, and V. E. Marsico, J. Phys. IV 7(C6), 3 (1997).
164. On the Mechanism of hydrogen-induced exfoliation of Silicon, M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S. B. Christman, and E.E. Chaban, J. Vac. Sci. Technol. B 15(4), 1065 (1997).
165. Initial H2O-induced Oxidation of Si(100)-(2x1), M.K. Weldon, B.B. Stefanov, K. Raghavachari and Y.J. Chabal, Phys. Rev. Lett. 79(15), 2851 (1997).
166. Mechanism of Silicon Exfoliation by Hydrogen Implantation and He, Li and Si Co-Implantation",M. K. Weldon, V. E. Marsico, Y. Chabal, M. Collot, Y. Caudano, S. B. Christman, E. E. Chaban, D. C. Jacobson, W. L. Brown, J. Sapjeta, C.-M. Hsieh, C. A. Goodwin, A. Agarwal, T. E. Haynes, W. B. Jackson, Proc. of the 1997 IEEE International SOI Conference, p.124 (1997).
167. Efficient Production of Silicon-on-Insulator Films by co-implantation of He+ with H", A. Agarwal, T. E. Haynes, V. C. Venezia, D. J. Eaglesham, M. K. Weldon, Y. J. Chabal, O. W. Holland, Proc. of the 1997 IEEE International SOI Conference, p.44 (1997).
168. Infrared Spectroscopy of Covalently Bonded Species on Silicon Surfaces:   Deuterium, Chlorine and Cobalt Tetracarbonyl", H. Luo, C.E.D. Chidsey and Y.J. Chabal, MRS Proc., 477, 415 (1997).
169. A mid- to far-infrared study of H8Si8O12 clusters on Si(100), J. Eng, L.M. Struck, A.M. Michaels, Y.J. Chabal and B.E. Bent, Proc. Am. Chem. Soc. S 213, 215- COLL Part I (1997).

1998
170. Mechanistic Studies of Silicon Wafer Bonding and Layer Exfoliation M.K. Weldon, V. E. Marsico, Y.J. Chabal, A. Agarwal, D. Eaglesham, J. Sapjeta, W. L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman and E.E. Chaban, Proc. Electrochemical Society, p. 229 (1998).
171. An Infrared Study of H8Si8O12 Cluster Adsorption on Si(100) Surfaces, J. Eng, K. Raghavachari, L.M. Struck, Y.J. Chabal, B.E. Bent, M.M. Banaszak-Holl, F.R. McFeely, A.M. Michaels, G.W. Flynn, S.B. Christman, E.E. Chaban, G.W. Williams, K. Radermacher, and S. Mantl, J. Chem. Phys. 108(20), 8680 (1998).
172. Silicon Epoxide: Unexpected Intermediate during Silicon Oxide Formation, B.B. Stefanov, A. Gurevich, M. K. Weldon, K. Raghavachari, and Y.J. Chabal, Phys. Rev. Lett. 81(18), 3908 (1998).
173. Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes Y. Caudano, M.K. Weldon, Y.J. Chabal, B.B. Stefanov, K. Raghavachari, D.C. Jacobson, S.B. Christman and E.E. Chaban. in Proc. Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. Electrochem. Soc., p. 365 (1998).
174. Mechanism of Silicon Exfoliation induced by Hydrogen/Helium co-implantation, M.K. Weldon, M. Collot, Y.J. Chabal, V.C. Venezia, A. Agarwal, T.E. Haynes, D.J. Eaglesham, S.B. Christman, and E.E. Chaban, Appl. Phys. Lett. 73(25), 3721 (1998).
175. Intermixing at the Tantalum Oxide/Silicon interface in Gate Dielectric Structures, G.B. Alers, D.J. Werder, Y.J. Chabal, H.C. Lu, E.P. Gusev, E. Garfunkel, T. Gustafsson, R. Urdahl, Appl. Phys. Lett. 73(11) , 1517 (1998).
176. Novel co-sputtered fluorinated amorphous carbon films for sub 0.25 micron low K damascene multilevel interconnect applications, W. Zhu, C.S. Pai, H.E. Bair, H.W. Krauter, R.L. Opila, B.S. Dennis, A. Pinczuk, Y. J. Chabal, G. Grundmeier, J.E. Graebner, K.P. Cheung, F.C. Schilling, C.B. Case, R. Liu, and S. Jin, IEDM Proc., p.845 (1998).
177. Hydrogen structures in heavily hydrogenated crystalline and amorphous silicon, W.B. Jackson, A. Franz, Y.J. Chabal, M.K. Weldon, H-C. Jin, and J.R. Abelson, MRS Proc. (1998).
178. Initial stage of the growth of Fe on Si(111)(1x1), H, M.G. Martin, J. Avila, M. Gruyters, C. Teodorescu, P. Dumas, Y.J. Chabal and M.C. Asensio, Appl. Surf. Sci. 123, 156 (1998).
179. Heterogeneous nucleation of oxygen on silicon: hydroxyl-mediated inter-dimer coupling on Si(100)-(2x1), A.B. Gurevich, B.B. Stefanov, M.K. Weldon, Y.J. Chabal, and K. Raghavachari, Phys. Rev. B 58(20), R13434 (1998).

1999
180. Molecules at surfaces and interfaces studied using vibrational spectroscopies and related techniques, P. Dumas, M.K. Weldon, Y.J. Chabal and G.P. Williams, Surf. Rev. Lett. 6(2), 225 (1999).
181. Passivation of crystalline silicon surfaces Y.J. Chabal, EMIS Datareviews Series 20 in Properties of Crystalline Silicon R. Hull ed, 20, 211 (1999).
182. The Physics and Chemistry of Silicon Wafer Bonding, M.K. Weldon and Y.J. Chabal, EMIS Datareviews Series 20 in Properties of Crystalline Silicon, R. Hull ed, 20, 905 (1999).
183. The Hydrogen-induced Exfoliation of Silicon, M.K. Weldon and Y.J. Chabal, EMIS Datareviews Series 20 in Properties of Crystalline Silicon R. Hull ed, 20, 942 (1999).
184. Thermal evolution of impurities in wet chemical oxides, A.B. Gurevich, M.K. Weldon, Y.J. Chabal, and R.L. Opila, Appl. Phys. Lett. 74(9), 1257 (1999).
185. The role of implantation damage in the production of silicon-on-insulator films by co-implantation of He+ and H+, V.C. Venezia, T.E. Haynes, A. Agarwal, D.J. Eaglesham, O.W. Holland, M.K. Weldon, and Y.J. Chabal, ECS Proc. Silicon Materials Science and Technology, 2, 1385 (1998).
186. Infrared Absorption studies of wet chemical oxides: Thermal evolution of impurities, Y.J. Chabal, M.K. Weldon, A.B. Gurevich, and S.B. Christman, Solid State Phenomena 65-66, 253 (1999).
187. Anharmonic Adlayer Vibrations on the Si(111)-:H Surface, R. Honke, P. Jakob, Y.J. Chabal, A. Dvorak, S. Tausendpfund, W. Stigler, P. Pavone, A.P. Mayer and U. Schroder, Phys. Rev. B 59(16), 10996 (1999).
188. Mechanistic Studies of Silicon Oxidation, M. K. Weldon, K. T. Queeney, Y. J. Chabal, B. B. Stefanov, K. Raghavachari, J. Vac. Sci. Technol. B 17(4), 1795 (1999).
189. Characterization and Production Metrology of Thin Transistor Gate Oxide Films, A. Diebold, D. Venables, Y. Chabal, D. Muller, M. Weldon, E. Garfunkel, Materials Science in Semiconductor Proc. 2(2), 103 (1999).
190. Silicon Oxidation and Ultra-thin Oxide Formation on Silicon Studied by Infrared Absorption Spectroscopy, K. Queeney, Y. Chabal, M. Weldon, K. Raghavachari, Phys. Status Solidi A 175, 77 (1999).
191. FTIR Studies of Si-SiO2 Interface Structure and Growth, K. T. Queeney, M.K. Weldon, Y.J. Chabal, B.B. Stefanov and K. Raghavachari, Ab. Am. Chem. Soc. 218, U462 (1999).
192. Spectroscopic Studies of H-decorated Interstitials and Vacancies in Thin Film Silicon Exfoliation” Y.J. Chabal, M.K. Weldon, Y. Caudano, B. Stefanov, K. Raghavachari, Physica B 274, 152 (1999).
193. X-ray Photoelectron Study of Gate Oxides and Nitrides R.L. Opila, J.P. Chang, M. Du, J. Bevk, Y. Ma, M. Weldon, Y. Chabal and A. Gurevich, Solid State Phenomena. 65-66, 257 (1999).
194. FT-IR Studies of Elementary Processes in Silicon Oxidation, M.K. Weldon, K.T. Queeney and Y.J. Chabal, Proc. 12th Int. Conf. on Fourier Transform Spectroscopy, (Tokyo, Aug. 1999), K. Itoh and M.Tasumi eds, Waseda University Press, 153 (1999).

2000
195. The Structure and composition of Wet Chemical Oxides: A photoemission and Infrared Study, J. Eng, Jr., R. L. Opila, Y.J. Chabal, J. Rosamilia and Martin L. Green, Proc. Electrochemical Society Cleaning Technology and Semiconductor Device Manufacturing VI, 99(36), 553 (2000).
196. Infrared Spectroscopic Analysis of the Si/SiO2 Interface of Thermally oxidized Silicon, K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta and R. L. Opila, J. Appl. Phys. 87(3), 1322 (2000).
197. Si-H Bending Modes as a Probe of local Chemical Structure: Thermal and Chemical Routes to Decomposition of H2O on Si(100)-(2x1), M.K. Weldon, A.B. Gurevich, K.T. Queeney, A.B. Gurevich, B.B. Stefanov, K. Raghavachari and Y.J. Chabal, J. Chem. Phys. 113(6), 2440 (2000).
198. Thermal Oxidation of Silicon with Hydrogen and Oxygen for Gate Oxide Application in Integrated Circuit Devices, Edith Yang, Yi Ma, Joe Eng, Jr., R. L. Opila, Jr., * Y. J. Chabal, Proc. Electrochem. Soc. (2000).
199. High ? Gate Dielectrics Gd2O3 and Y2O3 for Silicon, J. Kwo, M. Hong, A.R. Kortan, K.T. Queeney, Y.J. Chabal, J.P. Maenaerts, T. Boone, J.J. Krajewski, A.M. Sergent, and J.M.Rosamilia, Appl. Phys. Lett. 77(1), 130 (2000).
200. Mechanistic Studies of Wafer Bonding and Thin Film Exfoliation, Y.J. Chabal, E.D. Isaacs and M.K. Weldon, MRS Symp. Proc. 587, O4.41 (2000).
201. High Performance, Highly Reliable Gate Oxide formed with Rapid Thermal Oxidation in-situ Steam Generation (ISSG) Technique, Y. Ma, Y. Chen, M. Brown, F. Li, J. Eng, Jr., R. L. Opila, Y.J. Chabal, B.J. Sapjeta, D. Muller, G. Xing, T. Trowbridge, M. Khau, and N. Tam, Proc. Electrochemical society Rapid Thermal and other short-time processing technologies II 2000-9, 179 (2000).

2001
202. The Evolution of Chemical Oxides into Ultrathin Oxides: A spectroscopic Characterization, J. Eng, Jr., R.L. Opila, J.M. Rosamilia, B.J. Sapjeta, Y.J. Chabal, T. Boone, R. Masaitis, T. Sorsch, and M.L. Green, Solid State Phenomena 76-77, 145 (2001).
203. Role of interdimer interactions in NH3 Dissociation on Si(100)-(2×1) K.T. Queeney, K. Raghavachari and Y.J. Chabal, Phys. Rev. Lett. 86(6), 1046 (2001).
204. Ultra-thin Oxides and Initial Silicon Oxidation, Y.J. Chabal, M.K. Weldon and K.T. Queeney, in Fundamental Aspects of Silicon Oxidation Y.J. Chabal ed, Springer Series in Materials Science, 46, 143 (2001).
205. Vibrational studies of ultra-thin oxides and initial silicon oxidation, , Y.J. Chabal, M.K. Weldon, K.T. Queeney and A. Estève, in Fundamental Aspects of Silicon Oxidation Y.J. Chabal ed, Springer, 46, 143-159 (2001).
206. Water-saturated Si(100)-(2x1): Kinetic Monte Carlo simulations of thermal oxygen incorporation, A. Esteve, Y.J. Chabal, K. Raghavachari, M.K. Weldon, K.T. Queeney and M.D. Rouhani J. Appl. Phys. 90(12), 6000 (2001).
207. In situ FTIR Studies of Reactions at the Silicon/Liquid Interface: Wet Chemical Etching of Ultrathin SiO2 on Si(100), K.T. Queeney, H. Fukidome, E.E. Chaban and Y.J. Chabal, J. Phys. Chem. B 105(105), 3903 (2001).
208. Oxidation of H-covered Flat and Vicinal Si(111)-1×1 Surfaces, X. Zhang, Y.J. Chabal, S.B. Christman, E.E. Chaban and E. Garfunkel, J. Vac. Sci. Technol. A 19(4), 1725 (2001).
209. Atomic scale Oxidation of the 6H-SiC(0001)-(3×3) Surface, F. Amy, H. Enriquez, P.Soukiassian, Y.J. Chabal, P-F. Storino, A.J. Mayne, G. Dujardin, Y.K. Hwu, and C. Brylinski, Phys. Rev. Lett. 86(19), 4342 (2001).
210. Stability of HF-etched Si(100) Surfaces in oxygen ambient” X. Zhang, Y.J. Chabal, E. Garfunkel and S.B. Christman and E.E. Chaban, App. Phys. Lett. 79(24), 4051 (2001).
211. Kinetic Monte Carlo Simulations of Thermal Oxygen Incorporation into Water-covered Si(100)-(2?1), A. Esteve, Y.J. Chabal, Krishnan Raghavachari, M.K. Weldon, K.T. Queeney, and M. Djafari Rouhani, J. Appl. Phys. 90(12), 6000 (2001).
212. Review of: Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World, Y.J. Chabal, Physics Today, p76 ( 2001).
213. Properties of High ? Gate Dielectrics Gd2O3 and Y2O3 for Silicon, J. Kwo, M. Hong, A.R. Kortan, K.T. Queeney, Y.J. Chabal, R.L Opila, D.A. Muller, S.N.G. Chu, B.J. Sapjeta, T.S. Lay, J.P. Manneart, T. Boone, H.W. Krauter, J.J. Krajewski, A.M. Sergent and J.M. Rosamilia, J. Appl. Phys. 89(7), 3920 (2001).

2002
214. Internal Transmission Spectroscopy, Y.J. Chabal in Handbook of Vibrational Spectroscopy, J.M. Chalmers and P.R. Griffiths Eds, John Wiley & Sons, Ltd, 1, 1117 (2002).
215. The Surface Science of Semiconductor Processing: The Story of the Ever-shrinking Transistor, M.K. Weldon, J. Eng, Jr., K.T. Queeney, K. Raghavachari, and Y.J. Chabal, Review for Surface Science 500(1-3), 859 (2002).
216. Morphology, conduction and Interfacial Characteristics of Ultrathin (tequ=1.0nm) Gate Dielectrics: a Study of Critical Integration Issues for High K Dielectrics, J. Kwo, B. Busch, D.A. Muller, M. Hong, Y.J. Chabal, L. Manchanda, A.R. Kortan, J.P. Mannaerts, T. Boone, W.H. Schulte, E. Garfunkel, and T. Gustafsson”, IEDM proc. (2002).
217. Applications of Infrared Absorption Spectroscopy to the Microelectronic Industry Y.J. Chabal and K. Raghavachari, Surf. Sci. 502-503, 41 (2002).
218. Vibrational study of the Indium Phosphide oxides, Olivier Pluchery, Joseph Eng Jr., Robert L. Opila, Yves J. Chabal, Surf. Sci. 502, 75 (2002).
219. Investigation of the bending vibrations of vicinal H/Si(111) surfaces by infrared spectroscopy, Y. Caudano, P.A. Thiry and Y.J. Chabal, Surf. Sci. 502-503, 91 (2002).
220. In-situ FTIR studies of SiO2/liquid interfaces, H. Fukidome, O. Pluchery, K.T. Queeney, Y. Caudano, E. Chaban, S.B. Christman, K. Raghavachari, H. Kobayashi, and Y.J. Chabal, Surf. Sci. 502, 498 (2002)
221. Silanone (Si=O) at Si(100):initial intermediate for silicon oxidation, X. Zhang, Y.J. Chabal, K. Raghavachari and E. Garfunkel, Phys. Rev. B 66, 161315 (2002).
222. Materials Characterization of Alternative Gate Dielectrics, B. Busch, O. Pluchery, Y.J. Chabal, D. Muller and R.L. Opila, MRS bulletin 27 (3), 206 (2002).

2003
223. Nanochemistry at the Atomic Scale: Hydrogen-induced Semiconductor Surface Metallization, V. Derycke, P. Soukiassian, F. Amy, Y.J. Chabal, M. Dangelo, H. Enriquez and M. Silly, Nature Materials, 2(4), 253 (2003).
224. Advances in high ? gate dielectrics for Si and III-V semiconductor”, J. Kwo, M. Hong, B. Busch, D.A. Muller, Y.J. Chabal, A.R. Kortan, J.P. Mannaerts, B. Yang, P. Ye, H. Gossman, A.M. Sergent, K.K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, T. Gustafsson, J. Cryst. Growth 251, 645 (2003).
225. Synthesis and Characterization of Conjugated Mono- and Dithiol Oligomers and Characterization of Their Self-Assembled Monolayers, Hong Meng, Bert de Boer, Dmitrii F. Perepichka, Jie Zheng, Yves J. Chabal, Fred Wudl, P. Gregory Van Patten, Zhenan Bao, Langmuir 19, 4272 (2003).
226. Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides, M. Frank, Y.J. Chabal and G. D. Wilk, Appl. Phys. Lett 82, 4758 (2003).
227. The microscopic origin of optical phonon evolution during water oxidation of Si(100), K.T. Queeney, M. K. Weldon, Y.J. Chabal, K. Raghavachari, J. Chem. Phys. 119(4), 2307 (2003).
228. Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon, M. Frank, Y.J. Chabal, M.L. Green A. Delabie, B. Brijs, G.D. Wilk, M.Y. Ho, E. B. O. da Rosa, I. J. R. Baumvol and F. C. Stedile, Appl. Phys. Lett., 83(4), 740 (2003).
229. Wet Chemical Cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy, O. Pluchery, Y.J. Chabal, R.L. Opila and S.B. Christman, J. Appl. Phys. 94(4), 2707 (2003).
230. Interaction of H, O2, and H2O with 3C-SiC surfaces, F. Amy, Y.J. Chabal, J. Chem. Phys. 119(12), 6201 (2003).
231. Atomic layer deposition of Al2O3 on H-passivated Si: Al(CH3)2OH surface reactions with H/Si(100)-2x1, M.D. Halls, K. Raghavachari, M.M. Frank, Y.J. Chabal, Phys. Rev. B 68(16), 161302-1 (2003).
232. Structural and electrical characterization of organic monolayers on surfaces, W. Jiang, O. Celik, N. Zhitenev, Z. Bao, B. de Boer, J. Zaumseil, Y.J. Chabal, M.M. Frank, E. Garfunkel, Polymer Preprints 44, 372 (2003).
233. Self-assembled monolayers of conjugated thiols studied by infrared spectroscopy: structure and metal electrode deposition, M.M. Frank, B. de Boer, Y.J. Chabal, Z. Bao, Polymer Preprints 44, 383 (2003).
234. Electrical and structural characterization of the interface of wafer bonded InP/Si, A. Fontcuberta, I Morral, J.M. Zahler, H.A. Atwater, M.M. Frank, Y.J. Chabal, P. Ahrenkiel, M. Wanlass, H.A. Atwater, MRS Symp. Proc., M. Levy, M.I. Current, T. Sands eds, 768, G2.4.1 (2003).
235. In situ spectroscopic approach to atomic layer deposition, M.M. Frank, Y.J. Chabal and G.D. Wilk, MRS Soc. Symp., M.I. Gardner, S. De Gendt, J.-P. Maria, S. Stemmer eds, 745, 41-46 (2003).

2004
236.Infrared Spectroscopic Analysis of an Ordered Si/SiO2 Interface, K. T. Queeney, N. Herbots, Justin M. Shaw, V. Atluri, Y. J. Chabal, Appl. Phys. Lett. 84, 493 (2004)
237. Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono- and dithiols, B. de Boer, M.M. Frank, Y.J. Chabal, W. Jiang, E. Garfunkel, Z. Bao, Langmuir 20(5), 1539-1542 (2004).
238. Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects Matter, M.M. Frank, S. Sayan, S. Dörmann, T.J. Emge, L.S. Wielunski, E. Garfunkel, Y.J. Chabal, Sci. Eng. B, in press.

Patents:

Granted: US 6,388,290 B1:“Single Crystal Silicon on Polycrystalline Silicon Integrated Circuits” Yves J. Chabal and George K. Celler.

Filed: “Semiconductor device having a high K gate dielectric and method of manufacture thereof“ Yves J. Chabal, Martin L. Green and Glen Wilk

Filed: “A Process for Semiconductor Device Fabrication in which an Insulating layer is formed over a Semiconductor Substrate” Yves J. Chabal, Martin Frank and Glen Wilk.

Filed: ‘A Method for Semiconductor Device Fabrication in which an insulating Layer is formed over a Semiconductor Substrate” Yves J. Chabal, Martin Frank, Marin L. Green and Glen Wilk.